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APTGT150DU120TG Datasheet(PDF) 2 Page - Microsemi Corporation

Part # APTGT150DU120TG
Description  Dual common source Fast Trench Field Stop IGBT Power Module
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGT150DU120TG Datasheet(HTML) 2 Page - Microsemi Corporation

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APTGT150DU120TG
www.microsemi.com
2 - 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
250
µA
Tj = 25°C
1.7
2.1
VCE(sat)
Collector Emitter Saturation Voltage
VGE = 15V
IC = 150A
Tj = 125°C
2.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 3 mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
10.7
Coes
Output Capacitance
0.56
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
0.48
nF
Td(on)
Turn-on Delay Time
280
Tr
Rise Time
40
Td(off)
Turn-off Delay Time
420
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 2.2Ω
75
ns
Td(on)
Turn-on Delay Time
290
Tr
Rise Time
45
Td(off)
Turn-off Delay Time
520
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 2.2Ω
90
ns
Eon
Turn-on Switching Energy
Tj = 125°C
14
Eoff
Turn-off Switching Energy
VGE = ±15V
VBus = 600V
IC = 150A
RG = 2.2Ω
Tj = 125°C
16
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
500
µA
IF
DC Forward Current
Tc = 80°C
150
A
Tj = 25°C
1.6
2.1
VF
Diode Forward Voltage
IF = 150A
Tj = 125°C
1.6
V
Tj = 25°C
170
trr
Reverse Recovery Time
Tj = 125°C
280
ns
Tj = 25°C
15
Qrr
Reverse Recovery Charge
Tj = 125°C
29
µC
Tj = 25°C
7
Er
Reverse Recovery Energy
IF = 150A
VR = 600V
di/dt =3000A/µs
Tj = 125°C
12
mJ


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