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APTGT150DH120G Datasheet(PDF) 1 Page - Microsemi Corporation

Part # APTGT150DH120G
Description  Asymmetrical - Bridge Fast Trench Field Stop IGBT Power Module
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGT150DH120G Datasheet(HTML) 1 Page - Microsemi Corporation

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APTGT150DH120G
www.microsemi.com
1 - 5
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC= 25°C
220
IC
Continuous Collector Current
TC= 80°C
150
ICM
Pulsed Collector Current
TC= 25°C
350
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
690
W
RBSOA
Reverse Bias Safe Operating Area
Tj = 125°C
300A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
VBUS
OUT2
CR3
0/VBUS
E4
Q4
G4
OUT1
CR2
Q1
G1
E1
G4
E4
VBUS
G1
E1
0/VBUS
OUT2
OUT1
VCES = 1200V
IC = 150A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Features
Fast Trench + Field Stop IGBT® Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Asymmetrical - Bridge
Fast Trench + Field Stop IGBT®
Power Module


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