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APTGT150DH60TG Datasheet(PDF) 5 Page - Microsemi Corporation |
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APTGT150DH60TG Datasheet(HTML) 5 Page - Microsemi Corporation |
5 / 5 page APTGT150DH60TG 5 - 5 www.microsemi.com Forward Characteristic of diode TJ=25°C TJ=125°C TJ=150°C 0 50 100 150 200 250 300 0 0.4 0.8 1.2 1.6 2 2.4 VF (V) Hard switching ZCS ZVS 0 20 40 60 80 100 120 0 50 100 150 200 IC (A) VCE=300V D=50% RG=3.3Ω TJ=150°C Tc=85°C Operating Frequency vs Collector Current maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds Diode Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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