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APTGT20DDA60T3G Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTGT20DDA60T3G Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 5 page APTGT20DDA60T3G 2 - 5 www.microsemi.com All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 600V 250 µA Tj = 25°C 1.5 1.9 VCE(sat) Collector Emitter Saturation Voltage VGE =15V IC = 20A Tj = 150°C 1.7 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 300µA 5.0 5.8 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 300 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 1100 Coes Output Capacitance 70 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 35 pF Td(on) Turn-on Delay Time 110 Tr Rise Time 45 Td(off) Turn-off Delay Time 200 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 20A RG = 12Ω 40 ns Td(on) Turn-on Delay Time 120 Tr Rise Time 50 Td(off) Turn-off Delay Time 250 Tf Fall Time Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 20A RG = 12Ω 60 ns Tj = 25°C 0.11 Eon Turn-on Switching Energy Tj = 150°C 0.2 mJ Tj = 25°C 0.5 Eoff Turn-off Switching Energy VGE = ±15V VBus = 300V IC = 20A RG = 12Ω Tj = 150°C 0.7 mJ Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 100 IRM Maximum Reverse Leakage Current VR=600V Tj = 150°C 350 µA IF DC Forward Current Tc = 80°C 20 A Tj = 25°C 1.6 2 VF Diode Forward Voltage IF = 20A VGE = 0V Tj = 150°C 1.5 V Tj = 25°C 100 trr Reverse Recovery Time Tj = 150°C 150 ns Tj = 25°C 1.1 Qrr Reverse Recovery Charge Tj = 150°C 2.3 µC Tj = 25°C 0.23 Er Reverse Recovery Energy IF = 20A VR = 300V di/dt =1600A/µs Tj = 150°C 0.50 mJ |
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