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APTGF90TDU60PG Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTGF90TDU60PG Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 6 page APTGF90TDU60PG www.microsemi.com 2 - 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 250 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 125°C 500 µA Tj = 25°C 2.0 2.5 VCE(sat) Collector Emitter saturation Voltage VGE =15V IC = 90A Tj = 125°C 2.2 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 1mA 3 5 V IGES Gate – Emitter Leakage Current VGE = 20 V, VCE = 0V ±150 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 4300 Coes Output Capacitance 470 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 400 pF Qg Total gate Charge 330 Qge Gate – Emitter Charge 290 Qgc Gate – Collector Charge VGE = 15V VBus = 300V IC = 90A 200 nC Td(on) Turn-on Delay Time 26 Tr Rise Time 25 Td(off) Turn-off Delay Time 150 Tf Fall Time Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω 30 ns Td(on) Turn-on Delay Time 26 Tr Rise Time 25 Td(off) Turn-off Delay Time 170 Tf Fall Time Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω 40 ns Eon Turn-on Switching Energy Tj = 125°C 4.3 Eoff Turn-off Switching Energy VGE = 15V VBus = 400V IC = 90A RG = 5 Ω Tj = 125°C 3.5 mJ Diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current VR=600V Tj = 125°C 500 µA IF DC Forward Current Tc = 70°C 60 A IF = 60A 1.6 1.8 IF = 120A 1.9 VF Diode Forward Voltage IF = 60A Tj = 125°C 1.4 V Tj = 25°C 130 trr Reverse Recovery Time Tj = 125°C 170 ns Tj = 25°C 220 Qrr Reverse Recovery Charge IF = 60A VR = 400V di/dt =200A/µs Tj = 125°C 920 nC |
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