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AMIS-720442 Datasheet(PDF) 11 Page - AMI SEMICONDUCTOR |
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AMIS-720442 Datasheet(HTML) 11 Page - AMI SEMICONDUCTOR |
11 / 16 page AMIS-720442-A: 400dpi Contact Image Sensor Data Sheet Table 4: Electro-Optical Characteristics at High Frequency Red 660 LED Bar, A6 PCB in A6 Module Housing, at 5.0MHz Clock Parameters Symbols Typical Units Remarks Line scanning rate Tint (1) 334 µs/line 13 die in the scan, see Note 1 (bottom of Table 6) Clock frequency Fclk (2) 5 MHz Output voltage Vpavg (3) 0.5 V Amplifier gain = 1.0, see Note 3 Output voltage non-uniformity Up (4) ± 20 % LED bar non-unif y, see Note 4 ormit Dark output voltage Vd (5) <180 mV Dark output non-uniformity Ud (6) <80 mV Adjacent pixel non-uniformity Upadj (7) <20 % LED bar input voltage VLED (8) 5.0 V LED power varies y, see Note 8 greatl LED bar Input current ILED (8) 90 mA LED power varies y, see Note 8 greatl Table 5: Electro-Optical Characteristics at High Frequency Y-G LED Bar, A6 PCB in A6 Module Housing, at 2.0MHz Clock Parameters Symbols Typical Units Remarks Line scanning rate Tint (1) 835 µs/line 13 die in the scan, see Note 1 (bottom of Table 6) Clock frequency Fclk (2) 2 MHz Output voltage Vpavg (3) 0.4 V Amplifier gain = 1.0, see Note 3 Output voltage non-uniformity Up (4) ± 20 % LED bar non-unif y, see Note 4 ormit Dark output voltage Vd (5) <15 mV Dark output non-uniformity Ud (6) <15 mV Adjacent pixel non-uniformity Upadj (7) <20 % LED bar input voltage VLED (8) 5.0 V LED power varies y, see Note 8 greatl LED bar input current ILED (8) 380 mA LED power varies y, see Note 8 greatl Table 6: Electro-Optical Characteristics at High Frequency Y-G LED Bar, A6 PCB in A6 Module Housing, at 5.0MHz Clock Parameters Symbols Typical Units Remarks Line scanning rate Tint (1) 334 µs/line 13 die in the scan, see Note 1 (bottom of Table 6) Clock frequency Fclk (2) 5 MHz Output voltage Vpavg (3) 0.2 V Amplifier gain = 1.0, see Note 3 Output voltage non-uniformity Up (4) ± 25 % LED bar non-unif y, see Note 4 ormit Dark output voltage Vd (5) <160 mV Dark output non-uniformity Ud (6) <60 mV Adjacent pixel non-uniformity Upadj (7) <20 % LED bar input voltage VLED (8) 5.0 V LED power varies y, see Note 8 greatl LED bar input current ILED (8) 380 mA LED power varies y, see Note 8 greatl Notes: (1) Note 1 under integration time Table 2, is a valid d cept that in the A6 modules 3 sensors sequ k for the minimum . e production module) on all of CIS modules because of variations caused by the LED light sources. (4) sensors, or 13x128 pixels. 30%, the non-uniformities may varies as much as ± 30%. Hence the uniformities are (5) (6) p efinition, ex has 1 entially cascaded, hence, Tint = (13X128)/Fcl (2) Fclk is the module’s clock, CP, frequency and is equal to the pixel rate. Also, the clock duty cycle is set to 25 percent for the 2.0MHz clock frequency and set to 50 percent for the 5.0MHz. (3) Vpavg = ∑Vp(n)/Npixels (average level in one line scan). Where Vp(n) is the amplitude of n th pixel in one line scan of the modules. Npixels is the total number of pixels in the module, i.e., 13 die x 128 pixels. The amplitude of Vpavg is adjusted with RIN (which installed in th The low-cost production LED’s light power are known to vary as much as ± 30%. Up is the uniformity specification, measured under a uniform exposing light exposure. Up = [Vp(max) - Vpavg] / Vpavg x 100% or [Vpavg - Vp(min)] / Vpavg} x 100%, whichever is greater. Where Vp(max) is the maximum pixel output voltage in the light. Vp(min) is the minimum pixel output voltage in the dark. The pixel Vp(n) is one n th pixel in Npixels in the sensor. In applying the Up definition, Npixels must change. It must include 13 Additionally, because the low-cost LED power variation can be high as ± worst because of the LED bar CIS modules. Vd = ∑Vp(n)/Npixels. Where Vp(n) is the pixels signal amplitude of the nth pixel of the sensor. Dark is where light is off, leaving the image surface unexposed. Ud = Vdmax – Vdmin. (7) Upadj = MAX[ | (Vp(n) - Vp(n+l) | / Vp(n)) x 100%. Upadj is the non-uniformity in percentage. It is the amplitude difference between two neighboring pixels. powers are widely specified, worst case as high as ± 30%, hence, the requirement for the Vpavg gain control and the wide U (8) The low-cost LED light specifications. 11 AMI Semiconductor – May 06, M-20571-001 www.amis.com |
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