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APTGF30H60T3G Datasheet(PDF) 1 Page - Microsemi Corporation |
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APTGF30H60T3G Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 6 page APTGF30H60T3G www.microsemi.com 1 - 6 Absolute maximum ratings Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 600 V TC= 25°C 42 IC Continuous Collector Current TC= 80°C 30 ICM Pulsed Collector Current TC= 25°C 100 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation TC= 25°C 140 W RBSOA Reverse Bias Safe Operating Area Tj = 125°C 60A@500V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com Q3 11 10 Q1 CR1 7 22 13 14 CR3 3 30 29 32 18 19 23 8 15 31 R1 16 4 CR4 CR2 Q2 Q4 26 27 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … VCES = 600V IC = 30A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS compliant Full - Bridge NPT IGBT Power Module |
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