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APTC60DSKM35T3G Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTC60DSKM35T3G Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 6 page  APTC60DSKM35T3G www.microsemi.com 2 - 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 600V Tj = 25°C 40 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 600V Tj = 125°C 375 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 72A 35 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5.4mA 2.1 3 3.9 V IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V ±150 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 14 Coss Output Capacitance 5.13 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.42 nF Qg Total gate Charge 518 Qgs Gate – Source Charge 58 Qgd Gate – Drain Charge VGS = 10V VBus = 300V ID = 72A 222 nC Td(on) Turn-on Delay Time 21 Tr Rise Time 30 Td(off) Turn-off Delay Time 283 Tf Fall Time Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 72A RG = 2.5Ω 84 ns Eon Turn-on Switching Energy 1340 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 72A, RG = 2.5Ω 1960 µJ Eon Turn-on Switching Energy 2192 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 72A, RG = 2.5Ω 2412 µJ Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 350 IRM Maximum Reverse Leakage Current VR=600V Tj = 125°C 600 µA IF DC Forward Current Tc = 80°C 80 A Tj = 25°C 1.45 VF Diode Forward Voltage IF = 80A VGE = 0V Tj = 125°C 1.35 V Tj = 25°C 95 trr Reverse Recovery Time Tj = 125°C 115 ns Tj = 25°C 5.2 Qrr Reverse Recovery Charge IF = 80A VR = 300V di/dt =4500A/µs Tj = 125°C 8 µC |
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