APT75GT120JU3

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3 - 7

Chopper diode ratings and characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

2.0

2.5

2.3

Diode Forward Voltage

1.8

V

250

Maximum Reverse Leakage Current

500

µA

Junction Capacitance

32

pF

Reverse Recovery Time

di/dt =100A/µs

31

370

Reverse Recovery Time

500

ns

5

Maximum Reverse Recovery Current

12

A

660

Reverse Recovery Charge

di/dt =200A/µs

3450

nC

Reverse Recovery Time

220

ns

Reverse Recovery Charge

4650

nC

Maximum Reverse Recovery Current

di/dt =1000A/µs

37

A

Thermal and package characteristics

Symbol Characteristic

Min

Typ

Max

Unit

IGBT

0.3

Junction to Case Thermal Resistance

Diode

1.1

Junction to Ambient (IGBT & Diode)

20

°C/W

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

2500

V

-55

150

Max Lead Temp for Soldering:0.063” from case for 10 sec

300

°C

Torque

1.5

N.m

Wt

Package Weight

29.2

g

Typical IGBT Performance Curve

0

5

10

15

20

25

30

35

40

0

20

40

60

80

100

120

I

V

D=50%

R

T

Ope rating Fre quency vs Colle ctor Current