Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

APT10025JVFR Datasheet(PDF) 2 Page - Advanced Power Technology

Part # APT10025JVFR
Description  Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Download  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ADPOW [Advanced Power Technology]
Direct Link  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT10025JVFR Datasheet(HTML) 2 Page - Advanced Power Technology

  APT10025JVFR Datasheet HTML 1Page - Advanced Power Technology APT10025JVFR Datasheet HTML 2Page - Advanced Power Technology APT10025JVFR Datasheet HTML 3Page - Advanced Power Technology APT10025JVFR Datasheet HTML 4Page - Advanced Power Technology  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
DYNAMIC CHARACTERISTICS
APT10025JVFR
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.2
0.1
0.05
0.01
0.005
0.001
0.0005
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
µC
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
t f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6ý
MIN
TYP
MAX
15000
18000
1360
1900
710
1065
660
990
51
75
250
375
22
44
20
40
97
145
16
32
UNIT
pF
nC
ns
MIN
TYP
MAX
34
136
1.3
18
Tj = 25°C
300
Tj = 125°C
600
Tj = 25°C
1.8
Tj = 125°C
7.4
Tj = 25°C
16
Tj = 125°C
30
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 6.23mH, RG = 25ý, Peak IL = 34A
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
5 IS - -ID [Cont.], di/dt = 100A/µs, VDD - VDSS, Tj - 150°C, RG = 2.0ý,
VR = 200V
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL / PACKAGE CHARACTERISTICS
Symbol
RθJC
RθJA
VIsolation
Torque
MIN
TYP
MAX
0.18
40
2500
13
UNIT
°C/W
Volts
lb•in
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.


Similar Part No. - APT10025JVFR

ManufacturerPart #DatasheetDescription
logo
Advanced Power Technolo...
APT10025JVFR ADPOW-APT10025JVFR Datasheet
73Kb / 4P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
More results

Similar Description - APT10025JVFR

ManufacturerPart #DatasheetDescription
logo
Advanced Power Technolo...
APT10040B2VFR ADPOW-APT10040B2VFR Datasheet
40Kb / 2P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10043JVR ADPOW-APT10043JVR Datasheet
73Kb / 4P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10050B2VR ADPOW-APT10050B2VR Datasheet
59Kb / 4P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10050JVFR ADPOW-APT10050JVFR Datasheet
70Kb / 4P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10M09B2VFR ADPOW-APT10M09B2VFR Datasheet
41Kb / 2P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10M25BVFR ADPOW-APT10M25BVFR Datasheet
69Kb / 4P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10M25SVR ADPOW-APT10M25SVR Datasheet
68Kb / 4P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
APT10M30AVR ADPOW-APT10M30AVR Datasheet
66Kb / 4P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT20M11JVFR ADPOW-APT20M11JVFR Datasheet
74Kb / 4P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT20M18B2VFR ADPOW-APT20M18B2VFR Datasheet
41Kb / 2P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT20M18B2VR ADPOW-APT20M18B2VR Datasheet
39Kb / 2P
   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
More results


Html Pages

1 2 3 4


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com