EOL Data Sheet

©2007 Silicon Storage Technology, Inc.

S71146-07-EOL

6/07

1

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MPF is a trademark of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

8 Mbit (x8) Multi-Purpose Flash

SST39LF080 / SST39VF080

FEATURES:

•

Organized as 1M x8

•

Single Voltage Read and Write Operations

– 3.0-3.6V for SST39LF080

– 2.7-3.6V for SST39VF080

•

Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

•

Low Power Consumption

(typical values at 14 MHz)

– Active Current: 12 mA (typical)

– Standby Current: 4 µA (typical)

– Auto Low Power Mode: 4 µA (typical)

•

Sector-Erase Capability

– Uniform 4 KByte sectors

•

Block-Erase Capability

– Uniform 64 KByte blocks

•

Fast Read Access Time:

– 55 ns for SST39LF080

– 70 and 90 ns for SST39VF080

•

Latched Address and Data

•

Fast Erase and Byte-Program:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

15 seconds (typical) for SST39LF/VF080

•

Automatic Write Timing

•

End-of-Write Detection

– Toggle Bit

– Data# Polling

•

CMOS I/O Compatibility

•

JEDEC Standard

– Flash EEPROM Pinouts and command sets

•

Packages Available

– 40-lead TSOP (10mm x 20mm)

– 48-ball TFBGA (6mm x 8mm)

PRODUCT DESCRIPTION

The SST39LF/VF080 devices are 1M x8 CMOS Multi-Pur-

pose Flash (MPF) manufactured with SST’s proprietary,

high-performance CMOS SuperFlash technology. The

split-gate cell design and thick-oxide tunneling injector

attain better reliability and manufacturability compared with

alternate approaches. The SST39LF080 write (Program or

Erase) with a 3.0-3.6V power supply. The SST39VF080

write (Program or Erase) with a 2.7-3.6V power supply.

They conform to JEDEC standard pinouts for x8 memories.

Featuring high performance Byte-Program, the SST39LF/

VF080 devices provide a typical Byte-Program time of 14

µsec. The devices use Toggle Bit or Data# Polling to indi-

cate the completion of Program operation. To protect

against inadvertent write, they have on-chip hardware and

Software Data Protection schemes. Designed, manufac-

tured, and tested for a wide spectrum of applications,

these devices are offered with a guaranteed typical

endurance of 10,000 cycles. Data retention is rated at

greater than 100 years.

The SST39LF/VF080 devices are suited for applications

that require convenient and economical updating of pro-

gram, configuration, or data memory. For all system appli-

cations, they significantly improve performance and

reliability, while lowering power consumption. They inher-

ently use less energy during Erase and Program than alter-

native flash technologies. The total energy consumed is a

function of the applied voltage, current, and time of applica-

tion. Since for any given voltage range, the SuperFlash

technology uses less current to program and has a shorter

erase time, the total energy consumed during any Erase or

Program operation is less than alternative flash technolo-

gies. They also improve flexibility while lowering the cost for

program, data, and configuration storage applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet high density, surface mount requirements, the

SST39LF/VF080 are offered in 40-lead TSOP and 48-

ball TFBGA packages. See Figures 1 and 2 for pin

assignments.

SST39LF/VF0803.0 & 2.7V 8Mb (x8) MPF memories