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SST39SF512 Datasheet(PDF) 8 Page - Silicon Storage Technology, Inc |
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SST39SF512 Datasheet(HTML) 8 Page - Silicon Storage Technology, Inc |
8 / 22 page 8 Data Sheet 512 Kbit Multi-Purpose Flash SST39SF512 ©2003 Silicon Storage Technology, Inc. S71149-05-000 11/03 TABLE 5: DC OPERATING CHARACTERISTICS VDD = 4.5-5.5V1 Symbol Parameter Limits Test Conditions Min Max Units IDD Power Supply Current Address input=VILT/VIHT, at f=1/TRC Min VDD=VDD Max Read2 30 mA CE#=VIL, OE#=WE#=VIH, all I/Os open Program and Erase 50 mA CE#=WE#=VIL, OE#=VIH ISB1 Standby VDD Current (TTL input) 3µA CE#=VIH, VDD=VDD Max ISB2 Standby VDD Current (CMOS input) 50 µA CE#=VDD -0.3V, VDD=VDD Max ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 10 µA VOUT=GND to VDD, VDD=VDD Max VIL Input Low Voltage 0.8 V VDD=VDD Min VIH Input High Voltage 2.0 V VDD=VDD Max VOL Output Low Voltage 0.4 V IOL=2.1 mA, VDD=VDD Min VOH Output High Voltage 2.4 V IOH=-400 µA, VDD=VDD Min T5.6 1149 1. Typical conditions for the Active Current shown on the front data sheet page are average values at 25°C (room temperature), and VDD = 5V for SF devices. Not 100% tested. 2. Values are for 70 ns conditions. See the Multi-Purpose Flash Power Rating application note for further information. TABLE 6: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter Minimum Units TPU-READ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Power-up to Read Operation 100 µs TPU-WRITE1 Power-up to Program/Erase Operation 100 µs T6.1 1149 TABLE 7: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum CI/O1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. I/O Pin Capacitance VI/O = 0V 12 pF CIN1 Input Capacitance VIN = 0V 6 pF T7.0 1149 TABLE 8: RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification Units Test Method NEND1,2 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. 2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a higher minimum specification. Endurance 10,000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78 T8.2 1149 |
Similar Part No. - SST39SF512_03 |
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Similar Description - SST39SF512_03 |
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