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SST29EE010-70-4I-NHE Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST29EE010-70-4I-NHE Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc |
1 / 30 page ©2005 Silicon Storage Technology, Inc. S71061-11-000 9/05 1 The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. SSF is a trademark of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Data Sheet 1 Mbit (128K x8) Page-Write EEPROM SST29EE010 / SST29VE010 FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 2.7-3.6V for SST29VE010 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 2.7V – Standby Current: 10 µA (typical) • Fast Page-Write Operation – 128 Bytes per Page, 1024 Pages – Page-Write Cycle: 5 ms (typical) – Complete Memory Rewrite: 5 sec (typical) – Effective Byte-Write Cycle Time: 39 µs (typical) • Fast Read Access Time – 4.5-5.5V operation: 70 and 90 ns – 2.7-3.6V operation: 150 and 200 ns • Latched Address and Data • Automatic Write Timing – Internal VPP Generation • End of Write Detection – Toggle Bit – Data# Polling • Hardware and Software Data Protection • Product Identification can be accessed via Software Operation • TTL I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts and command sets • Packages Available – 32-lead PLCC – 32-lead TSOP (8mm x 14mm, 8mm x 20mm) – 32-pin PDIP • All non-Pb (lead-free) devices are RoHS compliant PRODUCT DESCRIPTION The SST29EE/VE010 are 128K x8 CMOS Page-Write EEPROMs manufactured with SST’s proprietary, high-per- formance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE/VE010 write with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE/VE010 conform to JEDEC standard pinouts for byte-wide memories. Featuring high performance Page-Write, the SST29EE/ VE010 provide a typical Byte-Write time of 39 µsec. The entire memory, i.e., 128 Kbyte, can be written page-by- page in as little as 5 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the comple- tion of a Write cycle. To protect against inadvertent write, the SST29EE/VE010 have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST29EE/ VE010 are offered with a guaranteed Page-Write endur- ance of 10,000 cycles. Data retention is rated at greater than 100 years. The SST29EE/VE010 are suited for applications that require convenient and economical updating of pro- gram, configuration, or data memory. For all system applications, the SST29EE/VE010 significantly improve performance and reliability, while lowering power consumption. The SST29EE/VE010 improve flexibility while lowering the cost for program, data, and configuration storage applications. To meet high density, surface mount requirements, the SST29EE/VE010 are offered in 32-lead PLCC and 32-lead TSOP packages. A 600-mil, 32-pin PDIP package is also available. See Figures 1, 2, and 3 for pin assignments. Device Operation The SST Page-Write EEPROM offers in-circuit electrical write capability. The SST29EE/VE010 does not require separate Erase and Program operations. The internally timed Write cycle executes both erase and program trans- parently to the user. The SST29EE/VE010 have industry standard optional Software Data Protection, which SST recommends always to be enabled. The SST29EE/VE010 are compatible with industry standard EEPROM pinouts and functionality. SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories |
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