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BQ2085-V1P3 Datasheet(PDF) 11 Page - Texas Instruments

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Part # BQ2085-V1P3
Description  SBS-COMPLIANT GAS GAUGE IC FOR USE WITH THE bq29311
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

BQ2085-V1P3 Datasheet(HTML) 11 Page - Texas Instruments

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bq2085-V1P3
SLUS598 − FEBRUARY 2004
www.ti.com
11
End-of-Discharge Thresholds and Capacity Correction
The bq2085−V1P3 monitors the battery for three low-voltage thresholds, EDV0, EDV1, and EDV2. The EDV
thresholds can be programmed for determination based on the overall pack voltage or an individual cell level.
The EDVV bit in Pack Configuration DF 0x28 configures the bq2085−V1P3 for overall voltage or single-cell EDV
thresholds. If programmed for single-cell EDV determination, the bq2085−V1P3 determines EDV on the basis
of the lowest single-cell voltage. Fixed EDV thresholds can be programmed in EMF/EDV0 DF 0x84-0x85, EDV
C0 Factor/EDV1
DF 0x86-0x87, and EDV R Factor/EDV2 DF 0x88-0x89. If the CEDV bit in Gauge
Configuration DF 0x29 is set, automatic EDV compensation is enabled and the bq2085−V1P3 computes the
EDV0, EDV1, and EDV2 thresholds based on the values in DF 0x84-0x8d and the battery’s current discharge
rate and temperature. The bq2085−V1P3 disables EDV detection if Current( ) exceeds the Overload Current
threshold programmed in DF 0x58 − DF 0x59. The bq2085−V1P3 resumes EDV threshold detection after
Current( ) drops below the Overload Current threshold. Any EDV threshold detected is reset after charge is
applied and VDQ is cleared after 10mAh of charge.
Table 2. State of Charge Based on Low Battery Voltage
THRESHOLD
RELATIVE STATE OF CHARGE
EDV0
0%
EDV1
3%
EDV2
Battery Low %
The bq2085−V1P3 uses the EDV thresholds to apply voltage-based corrections to the RM register according
to Table 1. The bq2085−V1P3 performs EDV-based RM adjustments with Current( )
≥ C/32. No EDVs are set
if current
< C/32. The bq2085−V1P3 adjusts RM as it detects each threshold. If the voltage threshold is reached
before the corresponding capacity on discharge, the bq2085−V1P3 reduces RM to the appropriate amount as
shown in Table 2. This reduction occurs only if current
≥ C/32 when the EDV threshold is detected. If RM
reaches the capacity level before the voltage threshold is reached on discharge, the bq2085−V1P3 prevents
RM from decreasing further until the battery voltage reaches the corresponding threshold only on a full learning
cycle discharge. RM is not held at the associated EDV percentage on a nonlearning discharge cycle (VDQ=0)
or if current
< C/32.
If Battery Low % is set to zero, EDV1 and EDV0 corrections are disabled.
Table 3. bq2085−V1P3 Register Functions
FUNCTION
COMMAND CODE
ACCESS
UNITS
ManufacturerAccess
0x00
read/write
NA
RemainingCapacityAlarm
0x01
read/write
mAh, 10 mWh
RemainingTimeAlarm
0x02
read/write
minutes
BatteryMode
0x03
read/write
NA
AtRate
0x04
read/write
mA, 10mW
AtRateTimeToFull
0x05
read
minutes
AtRateTimeToEmpty
0x06
read
minutes
AtRateOK
0x07
read
Boolean
Temperature
0x08
read
0.1
°K
Voltage
0x09
read
mV
Current
0x0a
read
mA
AverageCurrent
0x0b
read
mA
MaxError
0x0c
read
percent
RelativeStateOfCharge
0x0d
read
percent
AbsoluteStateOfCharge
0x0e
read
percent
RemainingCapacity
0x0f
read
mAh, 10 mWh


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