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SF31-T3 Datasheet(PDF) 1 Page - Won-Top Electronics |
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SF31-T3 Datasheet(HTML) 1 Page - Won-Top Electronics |
1 / 4 page SF31 – SF37 1 of 4 © 2006 Won-Top Electronics Pb SF31 – SF37 3.0A SUPERFAST DIODE Features ! Diffused Junction ! Low Forward Voltage Drop ! High Current Capability A B A ! High Reliability ! High Surge Current Capability Mechanical Data C ! Case: DO-201AD, Molded Plastic D ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 1.2 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol SF31 SF32 SF33 SF34 SF35 SF36 SF37 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 150 200 300 400 600 V RMS Reverse Voltage VR(RMS) 35 70 105 140 210 280 420 V Average Rectified Output Current (Note 1) @TA = 50°C IO 3.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 125 A Forward Voltage @IF = 3.0A VFM 0.95 1.3 1.7 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 5.0 100 µA Reverse Recovery Time (Note 2) trr 35 nS Typical Junction Capacitance (Note 3) Cj 100 80 pF Operating Temperature Range Tj -65 to +125 °C Storage Temperature Range TSTG -65 to +150 °C Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5. 3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. WTE POWER SEMICONDUCTORS DO-201AD Dim Min Max A 25.4 — B 7.20 9.50 C 1.20 1.30 D 4.80 5.30 All Dimensions in mm |
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