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SI2304DS Datasheet(PDF) 2 Page - NXP Semiconductors |
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SI2304DS Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 12 page Philips Semiconductors SI2304DS N-channel enhancement mode field-effect transistor Product data Rev. 01 — 17 August 2001 2 of 12 9397 750 08526 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 5. Quick reference data 6. Limiting values Table 2: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage (DC) Tj =25to150 °C −− 30 V ID drain current (DC) Tsp =25 °C; VGS =5V −− 1.7 A Ptot total power dissipation Tsp =25 °C −− 0.83 W Tj junction temperature −− 150 °C RDSon drain-source on-state resistance VGS =10V; ID = 500 mA −− 117 m Ω VGS = 4.5 V; ID = 500 mA −− 190 m Ω Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj =25to150 °C − 30 V VDGR drain-gate voltage (DC) Tj =25to150 °C; RGS =20kΩ− 30 V VGS gate-source voltage (DC) −±20 V ID drain current (DC) Tsp =25 °C; VGS =5V; Figure 2 and 3 − 1.7 A Tsp = 100 °C; VGS =5V; Figure 2 and 3 − 1.1 A IDM peak drain current Tsp =25 °C; pulsed; tp ≤ 10 µs − 7.5 A Ptot total power dissipation Tsp =25 °C; Figure 1 − 0.83 W Tstg storage temperature −65 +150 °C Tj operating junction temperature −65 +150 °C Source-drain diode IS source (diode forward) current (DC) Tsp =25 °C − 0.83 A ISM peak source (diode forward) current Tsp =25 °C; pulsed; tp ≤ 10 µs − 3.3 A |
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