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SB230 Datasheet(PDF) 1 Page - Won-Top Electronics |
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SB230 Datasheet(HTML) 1 Page - Won-Top Electronics |
1 / 4 page SB220 – SB2100 1 of 4 © 2006 Won-Top Electronics Pb SB220 – SB2100 2.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B A ! Low Power Loss, High Efficiency ! High Surge Current Capability ! For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications C D Mechanical Data ! Case: DO-15, Molded Plastic ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.40 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol SB220 SB230 SB240 SB250 SB260 SB280 SB2100 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 50 60 80 100 V RMS Reverse Voltage VR(RMS) 14 21 28 35 42 56 70 V Average Rectified Output Current @TL = 100°C (Note 1) IO 2.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 50 A Forward Voltage @IF = 2.0A VFM 0.50 0.70 0.85 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 0.5 10 mA Typical Junction Capacitance (Note 2) Cj 170 140 pF Typical Thermal Resistance (Note 1) RJA 35 °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. WTE POWER SEMICONDUCTORS DO-15 Dim Min Max A 25.4 — B 5.50 7.62 C 0.71 0.864 D 2.60 3.60 All Dimensions in mm |
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