Reference Data

8

3

• This catalog has only typical specifications because there is no space for detailed specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.

s Construction

Magnetic pattern recognition sensor consists of a pair of

magnetoresistive (MR) elements and a magnet.

Vin

Vout

GND

F-G

3

4

1

2

MR1

MR2

Sensing direction

S

B(KG)

500

1,000

R(

Ω)

0.3

0.3

0.2

0.2

0.1

0.1

0

N

Magnet

s Magnetoresistive Effect

A change in the resistance of a ferromagnetic or

semiconductive material when it is subjected to magnetic

flux is illustrated in the diagram. Murata's sensor uses InSb,

which exhibits a very high magnetoresistive effect.

s Principle of Operation

When a material printed with magnetic ink is scanned over

the sensor, the magnetic flux applied to MR1 and MR2

changes. Thus, the sensor generates signals as indicated

below.

Magnet

Flux

Scanning

Magnetic pattern

1

2

3

3

2

1

1/2 Vcc

Vcc

Output

GND

MR1

MR2

MR1 MR2

s Typical Application

+15V

±5%

OUTPUT

GND

–15V

±5%

0.1

µF

+

–

1.5M

Ω

10

µF

+

–

GND

Vout

Sensor

F. G

Vin

7805

22pF

+

–

47

µF

0.1

µF

10

µF

GAIN = 1,100

1k

Ω

+

–

+ –

Please read rating and !CAUTION (for storage, operating, rating, soldering, mounting and handling) in this PDF catalog to prevent smoking and/or burning, etc.

This catalog has only typical specifications. Therefore, you are requested to approve our product specifications or to transact the approval sheet for product specifications before ordering.

!Note

S31E4.pdf 04.8.30