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IRHNJ8230 Datasheet(PDF) 1 Page - International Rectifier |
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IRHNJ8230 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 9.4 ID @ VGS = 12V, TC = 100°C Continuous Drain Current 6.0 IDM Pulsed Drain Current À 37 PD @ TC = 25°C Max. Power Dissipation 75 W Linear Derating Factor 0.6 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy Á 150 mJ IAR Avalanche Current À 5.5 A EAR Repetitive Avalanche Energy À 7.5 mJ dv/dt Peak Diode Recovery dv/dt  16 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Pckg. Mounting Surface Temp. 300 (for 5s) Weight 1.0 (Typical) g Pre-Irradiation International Rectifier’s RAD-HardTM HEXFET® technology technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. oC A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) 05/16/06 www.irf.com 1 Features: n Single Event Effect (SEE) Hardened n Low RDS(on) n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Surface Mount n Light Weight For footnotes refer to the last page SMD-0.5 IRHNJ7230 200V, N-CHANNEL Product Summary Part Number Radiation Level RDS(on) ID IRHNJ7230 100K Rads (Si) 0.40 Ω 9.4A IRHNJ3230 300K Rads (Si) 0.40 Ω 9.4A IRHNJ4230 500K Rads (Si) 0.40 Ω 9.4A IRHNJ8230 1000K Rads (Si) 0.53 Ω 9.4A PD - 93821A RAD-Hard ™ HEXFET ® TECHNOLOGY |
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