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IRHNJ593Z30 Datasheet(PDF) 2 Page - International Rectifier |
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IRHNJ593Z30 Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page IRHNJ597Z30 Pre-Irradiation 2 www.irf.com Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage -30 — — V VGS = 0V, ID = -1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — -0.03 — V/°C Reference to 25°C, ID = -1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.07 Ω VGS = -12V, ID = -18A Resistance VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -1.0mA gfs Forward Transconductance 12 — — S ( ) VDS = -15V, IDS = -18A Ã IDSS Zero Gate Voltage Drain Current — — -10 VDS= -24V ,VGS=0V — — -25 VDS = -24V, VGS = 0V, TJ =125°C IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V IGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20V Qg Total Gate Charge — — 45 VGS =-12V, ID = -22A Qgs Gate-to-Source Charge — — 20 nC VDS = -15V Qgd Gate-to-Drain (‘Miller’) Charge — — 13 td(on) Turn-On Delay Time — — 25 VDD = -15V, ID = -22A, tr Rise Time — — 100 VGS = -12V, RG = 7.5Ω, td(off) Turn-Off Delay Time — — 50 tf Fall Time — — 70 LS + LD Total Inductance — 4.0 — Ciss Input Capacitance — 1670 — VGS = 0V, VDS = -25V Coss Output Capacitance — 975 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 126 — nA Ã nH ns µA Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 1.67 RthJ-PCB Junction-to-PC board — 6.9 — soldered to a 2 square copper-clad board °C/W Measured from the center of drain pad to center of source pad Note: Corresponding Spice and Saber models are available on International Rectifier website. For footnotes refer to the last page Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — -22* ISM Pulse Source Current (Body Diode) À — — -88 VSD Diode Forward Voltage — — -5.0 V Tj = 25°C, IS = -22A, VGS = 0V Ã trr Reverse Recovery Time — — 75 ns Tj = 25°C, IF =-22A, di/dt ≤ -100A/µs QRR Reverse Recovery Charge — — 125 nC VDD ≤ -25V Ã ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A * Current is limited by package Rg Internal Gate Resistance 6.6 f = 1.0MHz, open drain Ω |
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