IRHNB7Z60 datasheet(8/8 Pages) IRF

Part #	IRHNB7Z60

Description	RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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IRHNB7Z60

Pre-Irradiation

➃ Pulse width

≤ 300 µs; Duty Cycle ≤ 2%

➄ Total Dose Irradiation with VGS Bias.

12 volt VGS applied and VDS = 0 during

irradiation per MIL-STD-750, method 1019, condition A.

➅ Total Dose Irradiation with VDS Bias.

24 volt VDS applied and VGS = 0 during

irradiation per MlL-STD-750, method 1019, condition A.

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

➁ VDD = 25V, starting TJ = 25°C, L=0.17mH

Peak IL = 75A, VGS =12V

➂ ISD ≤ 75A, di/dt ≤ 94A/µs,

VDD ≤ 30V, TJ ≤ 150°C

Foot Notes:

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 12/01

Case Outline and Dimensions — SMD-3

PAD ASSIGNMENTS

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