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IRHMJ57260SE Datasheet(PDF) 3 Page - International Rectifier

Part # IRHMJ57260SE
Description  RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRHMJ57260SE Datasheet(HTML) 3 Page - International Rectifier

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Pre-Irradiation
IRHMJ57260SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
Range
VDS (V)
MeV/(mg/cm2))
(MeV)
(µm)
@VGS=0V@VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br
36.7
309
39.5
200
200
200
200
200
I
59.8
341
32.5
200
200
200
185
120
Au
82.3
350
28.4
200
200
150
50
25
0
50
100
150
200
250
0
-5
-10
-15
-20
VGS
Br
I
Au
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100K Rads (Si)
Units
Test Conditions ˆ
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
200
V
VGS = 0V, ID = 1.0mA
VGS(th)
Gate Threshold Voltage
2.0
4.5
VGS = VDS, ID = 1.0mA
IGSS
Gate-to-Source Leakage Forward
100
nA
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
IDSS
Zero Gate Voltage Drain Current
10
µA
VDS=160V, VGS=0V
RDS(on)
Static Drain-to-Source
„
On-State Resistance (TO-3)
0.044
VGS = 12V, ID = 28A
RDS(on)
Static Drain-to-Source
„
VSD
Diode Forward Voltage
„
1.2
V
VGS = 0V, ID = 35A
On-State Resistance (TO-254)
0.049
VGS = 12V, ID = 28A


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