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IRHMJ57260SE Datasheet(PDF) 3 Page - International Rectifier |
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IRHMJ57260SE Datasheet(HTML) 3 Page - International Rectifier |
3 / 8 page www.irf.com 3 Pre-Irradiation IRHMJ57260SE International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Radiation Characteristics Fig a. Single Event Effect, Safe Operating Area International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. For footnotes refer to the last page Table 2. Single Event Effect Safe Operating Area Ion LET Energy Range VDS (V) MeV/(mg/cm2)) (MeV) (µm) @VGS=0V@VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V Br 36.7 309 39.5 200 200 200 200 200 I 59.8 341 32.5 200 200 200 185 120 Au 82.3 350 28.4 200 200 150 50 25 0 50 100 150 200 250 0 -5 -10 -15 -20 VGS Br I Au Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter 100K Rads (Si) Units Test Conditions Min Max BVDSS Drain-to-Source Breakdown Voltage 200 — V VGS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 2.0 4.5 VGS = VDS, ID = 1.0mA IGSS Gate-to-Source Leakage Forward — 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse — -100 VGS = -20V IDSS Zero Gate Voltage Drain Current — 10 µA VDS=160V, VGS=0V RDS(on) Static Drain-to-Source On-State Resistance (TO-3) — 0.044 Ω VGS = 12V, ID = 28A RDS(on) Static Drain-to-Source VSD Diode Forward Voltage — 1.2 V VGS = 0V, ID = 35A On-State Resistance (TO-254) — 0.049 Ω VGS = 12V, ID = 28A |
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