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JANSG2N7491T2 Datasheet(PDF) 3 Page - International Rectifier |
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JANSG2N7491T2 Datasheet(HTML) 3 Page - International Rectifier |
3 / 8 page www.irf.com 3 Pre-Irradiation IRHF57Z30, JANSR2N7491T2 Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter Up to 500K Rads(Si)1 1000K Rads (Si)2 Units Test Conditions Min Max Min Max BVDSS Drain-to-Source Breakdown Voltage 30 — 30 — V VGS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 2.0 4.0 1.5 4.0 VGS = VDS, ID = 1.0mA IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V IDSS Zero Gate Voltage Drain Current — 10 — 25 µA VDS= 24V, VGS =0V RDS(on) Static Drain-to-Source à — 0.024 — 0.03 Ω VGS =12V, ID =10A On-State Resistance (TO-3) RDS(on) Static Drain-to-Source à — 0.045 — 0.056 Ω VGS =12V, ID =10A On-State Resistance (TO-39) International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Radiation Characteristics 1. Part numbers IRHF57Z30 (JANSR2N7491T2), IRHF53Z30 (JANSF2N7491T2) and IRHF54Z30 (JANSG2N7491T2) 2. Part number IRHF58Z30 (JANSH2N7491T2) Fig a. Single Event Effect, Safe Operating Area VSD Diode Forward Voltage à — 1.5 — 1.5 V VGS = 0V, IS =12A International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. For footnotes refer to the last page Ion LET Energy Range VDS (V) (MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V Cu 28 261 40 30 30 30 25 15 Br 37 285 37 30 30 30 23 15 I 60 344 33 25 25 20 15 8 Table 2. Single Event Effect Safe Operating Area 0 5 10 15 20 25 30 35 -20 -15 -10 -5 0 VGS Cu Br I |
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