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3

Pre-Irradiation

IRHE57Z30, JANSR2N94U5

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

ÄÅ

Parameter

Test Conditions

Min

Max

Min

Max

Drain-to-Source Breakdown Voltage

30

—

30

—

V

Gate Threshold Voltage

2.0

4.0

1.5

4.0

Gate-to-Source Leakage Forward

—

100

—

100

nA

Gate-to-Source Leakage Reverse

—

-100

—

-100

Zero Gate Voltage Drain Current

—

10

—

25

µA

Static Drain-to-Source

Ã

—

0.024

—

0.042

Ω

On-State Resistance (TO-3)

Static Drain-to-Source

Ã

—

0.07

—

0.088

Ω

On-State Resistance (LCC-18)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part numbers IRHE57Z30 (JANSR2N7494U5), IRHE53Z30 (JANSF2N7494U5) and IRHE54Z30 (JANSG2N7494U5)

2. Part number IRHE58Z30 (JANSH2N7494U5)

Fig a. Single Event Effect, Safe Operating Area

Diode Forward Voltage

Ã

—

1.8

—

1.8

V

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy

Range

(MeV)

(µm)

Cu

28

261

40

30

30

30

25

15

Br

37

285

37

30

30

30

23

15

I

60

344

33

25

25

20

15

8

0

5

10

15

20

25

30

35

-20

-15

-10

-5

0

VGS

Cu

Br

I