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IRGB4B60K Datasheet(PDF) 2 Page - International Rectifier |
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IRGB4B60K Datasheet(HTML) 2 Page - International Rectifier |
2 / 13 page IRGB/S/SL4B60K 2 www.irf.com Note to are on page 16 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig. V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ——V VGE = 0V, IC = 500µA ∆V (BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —0.28 — V/°C VGE = 0V, IC = 1mA (25°C-150°C) —2.1 2.5 IC = 4.0A, VGE = 15V, TJ = 25°C 5,6,7 VCE(on) Collector-to-Emitter Voltage — 2.5 2.8 V IC = 4.0A, VGE = 15V, TJ = 150°C 9,10,11 —2.6 2.8 IC = 4.0A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250µA 9,10,11 ∆V GE(th)/∆TJ Threshold Voltage temp. coefficient — -8.1 — mV/°C VCE = VGE, IC = 1mA (25°C-150°C) 12 gfe Forward Transconductance — 1.7 — S VCE = 50V, IC = 4.0A, PW = 80µs —1.0 150 VGE = 0V, VCE = 600V ICES Zero Gate Voltage Collector Current — 54 300 µA VGE = 0V, VCE = 600V, TJ = 150°C — 300 800 VGE = 0V, VCE = 600V, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig. Qg Total Gate Charge (turn-on) — 12 — IC = 4.0A 23 Qge Gate-to-Emitter Charge (turn-on) — 1.7 — nC VCC = 400V CT1 Qgc Gate-to-Collector Charge (turn-on) — 6.5 — VGE = 15V Eon Turn-On Switching Loss — 73 80 IC = 4.0A, VCC = 400V CT4 Eoff Turn-Off Switching Loss — 47 53 µJ VGE = 15V, RG = 100Ω, L = 2.5mH Etot Total Switching Loss — 120 130 TJ = 25°C e td(on) Turn-On delay time — 22 28 IC = 4.0A, VCC = 400V tr Rise time — 18 23 ns VGE = 15V, RG = 100Ω, L = 2.5mH CT4 td(off) Turn-Off delay time — 100 110 TJ = 25°C tf Fall time — 66 80 Eon Turn-On Switching Loss — 130 150 IC = 4.0A, VCC = 400V CT4 Eoff Turn-Off Switching Loss — 83 140 µJ VGE = 15V, RG = 100Ω, L = 2.5mH 13,15 Etot Total Switching Loss — 220 280 TJ = 150°C e WF1,WF2 td(on) Turn-On delay time — 22 27 IC = 4.0A, VCC = 400V 14,16 tr Rise time — 18 22 ns VGE = 15V, RG = 100Ω, L = 2.5mH CT4 td(off) Turn-Off delay time — 120 130 TJ = 150°C WF1 tf Fall time — 79 89 WF2 Cies Input Capacitance — 190 — VGE = 0V Coes Output Capacitance — 25 — pF VCC = 30V 22 Cres Reverse Transfer Capacitance — 6.2 — f = 1.0MHz RBSOA Reverse Bias Safe Operating Area FULL SQUARE TJ = 150°C, IC = 24A, Vp = 600V 4 VCC=500V,VGE = +15V to 0V,RG = 100Ω CT2 SCSOA Short Circuit Safe Operating Area 10 — — µs TJ = 150°C, Vp = 600V, RG = 100Ω CT3 VCC=360V,VGE = +15V to 0V WF3 |
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Similar Description - IRGB4B60K |
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