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IRFE9110 Datasheet(PDF) 2 Page - International Rectifier |
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IRFE9110 Datasheet(HTML) 2 Page - International Rectifier |
2 / 7 page IRFE9110 2 www.irf.com Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction to Case — — 8.3 RthJ-PCB Junction to PC Board — — 27 Soldered to a copper clad PC board °C/W Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — -2.5 ISM Pulse Source Current (Body Diode) ➀ — — -10 VSD Diode Forward Voltage — — -5.5 V Tj = 25°C, IS = -2.5A, VGS = 0V ➃ trr Reverse Recovery Time — — 200 nS Tj = 25°C, IF = -2.5A, di/dt ≤-100A/µs QRR Reverse Recovery Charge — — 380 µc VDD ≤ -50V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A For footnotes refer to the last page Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — -0.08 — V/°C Reference to 25°C, ID = -1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 1.2 VGS = -10V, ID = -1.6A➃ Resistance — — 1.38 VGS = -10V, ID = -2.5A ➃ VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 0.9 — — S ( ) VDS > -15V, IDS = -1.6A➃ IDSS Zero Gate Voltage Drain Current — — -25 VDS= -80V, VGS= 0V — — -250 VDS =-80V VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — -100 VGS =-20V IGSS Gate-to-Source Leakage Reverse — — 100 VGS =20V Qg Total Gate Charge — — 15 VGS =-10V, ID= -2.5A Qgs Gate-to-Source Charge — — 7.0 nC VDS =-50V Qgd Gate-to-Drain (‘Miller’) Charge — — 8.0 td(on) Turn-On Delay Time — — 30 VDD =-50V, ID = -2.5A, tr Rise Time — — 60 VGS =-10V, RG =7.5Ω td(off) Turn-Off Delay Time — — 40 tf Fall Time — — 40 LS + LD Total Inductance — 6.1 — Ciss Input Capacitance — 214 VGS = 0V, VDS = -25V Coss Output Capacitance — 100 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 20 — nA nH ns µA Ω Measured from the center of drain pad to center of source pad |
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