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IRF640N Datasheet(PDF) 1 Page - International Rectifier

Part No. IRF640N
Description  HEXFET Power MOSFET
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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 1 page
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HEXFET® Power MOSFET
10/08/04
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
18
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
13
A
IDM
Pulsed Drain Current

72
PD @TC = 25°C
Power Dissipation
150
W
Linear Derating Factor
1.0
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
247
mJ
IAR
Avalanche Current

18
A
EAR
Repetitive Avalanche Energy

15
mJ
dv/dt
Peak Diode Recovery dv/dt
†
8.1
V/ns
TJ
Operating Junction and
-55 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
„
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Description
VDSS = 200V
RDS(on) = 0.15Ω
ID = 18A
S
D
G
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
D2Pak
IRF640NS
TO-220AB
IRF640N
TO-262
IRF640NL
IRF640N
IRF640NS
IRF640NL
Fifth Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low
on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF640NL) is available for low-
profile application.
www.irf.com
1
PD - 94006A




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