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IRF540NL Datasheet(PDF) 1 Page - International Rectifier

Part # IRF540NL
Description  HEXFET짰 Power MOSFET
Download  10 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF540NL Datasheet(HTML) 1 Page - International Rectifier

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IRF540NS
IRF540NL
HEXFET® Power MOSFET
07/01/05
www.irf.com
1
VDSS = 100V
RDS(on) = 44mΩ
ID = 33A
S
D
G
Advanced HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF540NL) is available for low-
profile applications.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
‡
33
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
‡
23
A
IDM
Pulsed Drain Current
‡
110
PD @TC = 25°C
Power Dissipation
130
W
Linear Derating Factor
0.87
W/°C
VGS
Gate-to-Source Voltage
± 20
V
IAR
Avalanche Current

16
A
EAR
Repetitive Avalanche Energy

13
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ‡
7.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
D2Pak
IRF540NS
TO-262
IRF540NL
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.15
RθJA
Junction-to-Ambient (PCB mount)**
–––
40
Thermal Resistance
°C/W
PD - 91342B


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