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ER1J-T3 Datasheet(PDF) 1 Page - Won-Top Electronics |
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ER1J-T3 Datasheet(HTML) 1 Page - Won-Top Electronics |
1 / 4 page ER1A – ER1J 1 of 4 © 2006 Won-Top Electronics Pb ER1A – ER1J 1.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE Features ! Glass Passivated Die Construction ! Ideally Suited for Automatic Assembly B ! Low Forward Voltage Drop, High Efficiency ! Surge Overload Rating to 30A Peak D ! Low Power Loss A ! Super-Fast Recovery Time F ! Plastic Case Material has UL Flammability Classification Rating 94V-O C H G E Mechanical Data ! Case: SMB/DO-214AA, Molded Plastic ! Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Weight: 0.093 grams (approx.) ! Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Characteristic Symbol ER1A ER1B ER1C ER1D ER1E ER1G ER1J Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 150 200 300 400 600 V RMS Reverse Voltage VR(RMS) 35 70 105 140 210 280 420 V Average Rectified Output Current @TL = 100°C IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Forward Voltage @IF = 1.0A VFM 0.95 1.25 1.7 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 5.0 500 µA Reverse Recovery Time (Note 1) trr 35 nS Typical Junction Capacitance (Note 2) Cj 10 pF Typical Thermal Resistance (Note 3) RJL 34 °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. WTE POWER SEMICONDUCTORS SMB/DO-214AA Dim Min Max A 3.30 3.94 B 4.06 4.70 C 1.91 2.11 D 0.152 0.305 E 5.08 5.59 F 2.13 2.44 G 0.051 0.203 H 0.76 1.27 All Dimensions in mm |
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