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DF151S-T3 Datasheet(PDF) 1 Page - Won-Top Electronics |
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DF151S-T3 Datasheet(HTML) 1 Page - Won-Top Electronics |
1 / 4 page DF150S – DF1510S 1 of 4 © 2006 Won-Top Electronics Pb DF150S – DF1510S 1.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Features Glass Passivated Die Construction G Low Forward Voltage Drop High Current Capability High Surge Current Capability - + Designed for Surface Mount Application B ~ ~ A D E Plastic Material – UL Recognition Flammability Classification 94V-O C L H Mechanical Data J Case: DF-S, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 K Polarity: As Marked on Case Weight: 1.0 grams (approx.) Mounting Position: Any Marking: Type Number Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol DF 150S DF 151S DF 152S DF 154S DF 156S DF 158S DF 1510S Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current @TA = 40°C IO 1.5 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 50 A Forward Voltage per element @IF = 1.5A VFM 1.1 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 125°C IRM 5.0 500 µA Typical Junction Capacitance per element (Note 1) Cj 25 pF Typical Thermal Resistance per leg (Note 2) RθJA RθJL 40 15 °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 2. Mounted on PC board with 13mm 2 copper pad. WTE POWER SEMICONDUCTORS DF-S Dim Min Max A 7.50 8.50 B 6.20 6.80 C 0.25 — D 0.10 0.28 E 9.40 10.30 G 1.02 1.53 H 8.00 8.51 J 2.20 2.60 K 5.00 5.20 L 0.89 1.20 All Dimensions in mm |
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