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SAA6588T Datasheet(PDF) 16 Page - NXP Semiconductors

Part No. SAA6588T
Description  RDS/RBDS pre-processor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 16 page
background image
1997 Sep 01
16
Philips Semiconductors
Product specification
RDS/RBDS pre-processor
SAA6588
CHARACTERISTICS DIGITAL PART
VDDA =VDDD =5V; Tamb =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
VDDD
digital supply voltage
4.5
5.0
5.5
V
IDDD
digital supply current
6.0
mA
Ptot
total power dissipation
70
mW
Inputs
VIL1
LOW-level input voltage at
pins TCON, OSCI and MAD
−−
0.3VDDD
V
VIL2
LOW-level input voltage at
pins SCL and SDA
VDDD = 4.5 to 5.0 V
−0.5
+1.5
V
VDDD = 5.0 to 5.5 V
−0.5
+0.3VDDD
V
VIH1
HIGH-level input voltage at
pins TCON, OSCI and MAD
0.7VDDD −−
V
VIH2
HIGH-level input voltage at
pins SCL and SDA
VDDD = 4.5 to 5.5 V
3.0
VDDD + 0.5 V
ILI
input leakage current at
pins TCON, SCL and SDA
VMAD =0toVDDD
−−
10
µA
Ii(pu)
input pull-up current at pin MAD
VMAD =VIL1
−30
−20
−µA
VMAD = 3.5 V
−−20
−10
µA
Outputs
VOL1
LOW-level output voltage at
pins DAVN, PSWN and OSCO
IOL =2mA
−−
0.4
V
VOL2
LOW-level output voltage at
pin SDA
IOL1 = 4.0 mA
−−
0.4
V
IOL2 = 6.0 mA
−−
0.6
V
VOH
HIGH-level output voltage at
pins DAVN, PSWN and OSCO
IOH = −2 mA
4.0
−−
V
Crystal parameters
fi(xtal)
crystal input frequency
n = 1
4.332
MHz
n=2
8.664
MHz
n=3
12.996
MHz
n=4
17.328
MHz
∆f
osc
adjustment tolerance of oscillator
frequency
−−
30
ppm
∆f
osc(T)
temperature drift of oscillator
frequency
Tamb = −40 to +85 °C
−−
30
ppm
CL
load capacitance
30
pF
Rxtal
crystal resonance resistance
fosc ≤ 12.996 MHz
−−
120
fosc = 17.328 MHz
−−
60




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