2-627
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
P DETECT
P DOWN
VREG1GND
RF IN
GND
RF OUT
RF OUT
RF OUT
15
14
13
12
11
10
4
3
2
1
16
9
8
7
6
5
Bias
RF5163
3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER
• 802.11b/g/n Access Points
• PCS Communication Systems
• 2.4GHz ISM Band Applications
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• Broadband Spread-Spectrum Systems
The RF5163 is a linear, medium-power, high-efficiency
amplifier IC designed specifically for low voltage opera-
tion. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as the final RF
amplifier in 802.11b/g/n access point transmitters. The
device is provided in a 4mmx4mm, 16-pin, leadless chip
carrier with a backside ground. The RF5163 is designed
to maintain linearity over a wide range of supply voltage
and power output.
• Single 3.3V or 5V Power Supply
• +33dBm Saturated Output Power (typ.)
• 20dB Large Signal Gain (typ.)
• 2.0% EVM @ +26dBm, 54Mbps (typ.)
• Separate Power Detect/Power Down Pins
• 1800MHz to 2500MHz Frequency Range
RF5163
3V-5V, 2.5GHz Linear Power Amplifier, Matte-Sn
(Pb-free) Finish
RF5163L
3V-5V, 2.5GHz Linear Power Amplifier, Sn-Pb Finish
RF5163PCBA-41XFully Assembled Evaluation Board
RF5163PCBA-WD Fully Assembled Evaluation Board, With Driver
0
Rev A12 061114
0.10
CA B
M
0.35
0.23
Pin 1 ID
0.20 R
2.25
1.95
SQ.
0.65
0.75
0.50
TYP
0.60
0.24
TYP
0.05 C
0.90
0.85
0.70
0.65
0.05
0.00
12°
MAX
-C-
SEATING
PLANE
Shaded lead is pin 1.
Dimensions in mm.
0.10 C A
2 PLCS
-A-
4.00 SQ.
0.10 C B
2 PLCS
0.10 C B
2 PLCS
-B-
3.75 SQ
1.87 TYP
0.10 C A
2 PLCS
2.00 TYP
Package Style: QFN, 16-Pin, 4x4
RoHS Compliant & Pb-Free Product