2-5
RF5110G
Rev A3 060814
Theory of Operation and Application Information
The RF5110G is a three-stage device with 32 dB gain at full power. Therefore, the drive required to fully saturate the out-
put is +3dBm. Based upon HBT (Heterojunction Bipolar Transistor) technology, the part requires only a single positive
3V supply to operate to full specification. Power control is provided through a single pin interface, with a separate Power
Down control pin. The final stage ground is achieved through the large pad in the middle of the backside of the package.
First and second stage grounds are brought out through separate ground pins for isolation from the output. These
grounds should be connected directly with vias to the PCB ground plane, and not connected with the output ground to
form a so called “local ground plane” on the top layer of the PCB. The output is brought out through the wide output pad,
and forms the RF output signal path.
The amplifier operates in near Class C bias mode. The final stage is “deep AB”, meaning the quiescent current is very
low. As the RF drive is increased, the final stage self-biases, causing the bias point to shift up and, at full power, draws
about 2000mA. The optimum load for the output stage is approximately 2.6
Ω. This is the load at the output collector, and
is created by the series inductance formed by the output bond wires, vias, and microstrip, and 2 shunt capacitors exter-
nal to the part. The optimum load impedance at the RF Output pad is 2.6-j1.5
Ω. With this match, a 50Ω terminal imped-
ance is achieved. The input is internally matched to 50
Ω with just a blocking capacitor needed. This data sheet defines
the configuration for GSM operation.
The input is DC coupled; thus, a blocking cap must be inserted in series. Also, the first stage bias may be adjusted by a
resistive divider with high value resistors on this pin to VPC and ground. For nominal operation, however, no external
adjustment is necessary as internal resistors set the bias point optimally.
VCC1 and VCC2 provide supply voltage to the first and second stage, as well as provides some frequency selectivity to
tune to the operating band. Essentially, the bias is fed to this pin through a short microstrip. A bypass capacitor sets the
inductance seen by the part, so placement of the bypass cap can affect the frequency of the gain peak. This supply
should be bypassed individually with 100pF capacitors before being combined with VCC for the output stage to prevent
feedback and oscillations.
The RF OUT pin provides the output power. Bias for the final stage is fed to this output line, and the feed must be capa-
ble of supporting the approximately 2A of current required. Care should be taken to keep the losses low in the bias feed
and output components. A narrow microstrip line is recommended because DC losses in a bias choke will degrade effi-
ciency and power.
While the part is safe under CW operation, maximum power and reliability will be achieved under pulsed conditions. The
data shown in this data sheet is based on a 12.5% duty cycle and a 600
μs pulse, unless specified otherwise.
The part will operate over a 3.0V to 5.0V range. Under nominal conditions, the power at 3.5V will be greater than
+34.5dBm at +90°C. As the voltage is increased, however, the output power will increase. Thus, in a system design, the
ALC (Automatic Level Control) Loop will back down the power to the desired level. This must occur during operation, or
the device may be damaged from too much power dissipation. At 5.0V, over +38dBm may be produced; however, this
level of power is not recommended, and can cause damage to the device.
The HBT breakdown voltage is >20V, so there are no issue with overvoltage. However, under worst-case conditions, with
the RF drive at full power during transmit, and the output VSWR extremely high, a low load impedance at the collector of
the output transistors can cause currents much higher than normal. Due to the bipolar nature of the devices, there is no
limitation on the amount of current de device will sink, and the safe current densities could be exceeded.
High current conditions are potentially dangerous to any RF device. High currents lead to high channel temperatures and
may force early failures. The RF5110G includes temperature compensation circuits in the bias network to stabilize the
RF transistors, thus limiting the current through the amplifier and protecting the devices from damage. The same mecha-
nism works to compensate the currents due to ambient temperature variations.
To avoid excessively high currents it is important to control the VAPC when operating at supply voltages higher than 4.0V,
such that the maximum output power is not exceeded.
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