4-201
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
GND
GND
GND
RF IN
GND
RF OUT
VDD
NC
2
1
4
3
7
8
5
6
RF2304
GENERAL PURPOSE LOW-NOISE AMPLIFIER
• Receive or Transmit Low-Noise Amplifiers
• FDD and TDD Communication Systems
• Commercial and Consumer Systems
• Portable Battery Powered Equipment
• Wireless LAN
• ISM Band Applications
The RF2304 is a low-noise small-signal amplifier. The
device is manufactured on a low-cost Gallium Arsenide
MESFET process, and has been designed for use as a
gain block in high-end communication systems operating
from less than 300MHz to above 2.5GHz. With +6dBm
output power, it may also be used as a driver in transmit-
ter applications, or in highly linear receivers. The device is
packaged in an 8-lead plastic package and is self-con-
tained, requiring just an inductor and blocking capacitors
to operate. The +6dBm output power, combined with the
1.8dB noise figure at 900MHz allows excellent dynamic
range for a variety of receive and transmit applications.
• Single 2.7V to 6.0V Supply
• 6dBm Output Power
• 8dB Small Signal Gain at 900MHz
• 1.8dB Noise Figure at 900MHz
• Low DC Current Consumption of 5mA
• 300MHz to 2500MHz Operation
RF2304
General Purpose Low-Noise Amplifier
RF2304PCBA-41X Fully Assembled Evaluation Board
0
Rev A7 060908
0.244
0.229
0.157
0.150
0.018
0.014
0.050
0.068
0.053
NOTES:
1. Shaded lead is Pin 1.
2. All dimensions are excluding
mold flash.
3. Lead coplanarity -
0.005 with respect to datum "A".
0.196
0.189
0.008
0.004
-A-
8° MAX
0° MIN
0.034
0.016
0.009
0.007
Package Style: SOIC-8
RoHS Compliant & Pb-Free Product
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