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SFF24N50-3 Datasheet(PDF) 1 Page - Solid States Devices, Inc |
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SFF24N50-3 Datasheet(HTML) 1 Page - Solid States Devices, Inc |
1 / 2 page Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Features: • Rugged Construction with Polysilicon Gate Cell • Low RDS(ON) and High Transconductance • Excellent High Temperature Stability • Very Fast Switching Speed • Fast Recovery and Superior dV/dt Performance • Increased Reverse Energy Capability • Low Input and Transfer Capacitance for Easy Paralleling • Hermetically Sealed Surface Mount Power Package • TX, TXV, Space Level Screening Available • Replacement for IXTH24N50 Types SFF24N50/3 SFF24N50/3T 24 AMP / 500 Volts 0.2 Ω N-Channel Power MOSFET TO-3 Maximum Ratings Symbol Value Units Drain – Source Voltage VDS 500 Volts Gate – Source Voltage VGS ±20 Volts Continuous Drain Current (Tj limited) ID 24 Amps Avalanche Current Repetitive IAR 21 Amps Avalanche Energy Repetitive Single Pulse EAR EAS 1 690 mJ Operating & Storage Temperature Top & Tstg -55 to +150 ºC Thermal Resistance, Junction to Case RθJC 0.75 (typ 0.6) ºC/W Total Device Dissipation @ TC=25ºC Total Device Dissipation @ TC=55ºC PD 167 126 WATTS Package Outline: TO-3 Pin Out: Pin 1: GATE Pin 2: SOURCE Pin 3: DRAIN Notes: 1. P/N: SFF 24N50/3: Pin Diameter : 0.043” 0.038” 2. P/N: SFF24N50/3T: Pin Diameter: 0.063” 0.058” NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00175E DOC 1.197 1.177 Ø.875 MAX 2x .043 .038 .675 .655 .525 MAX .135 MAX .440 .420 2x .225 .205 .450 .250 2x .312 MIN 2x Ø.165 .151 2x R.188 MAX SEATING PLANE 2 1 |
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