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SA5212AD Datasheet(PDF) 7 Page - NXP Semiconductors |
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SA5212AD Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 20 page Philips Semiconductors Product specification SA5212A Transimpedance amplifier (140MHz) 1998 Oct 07 7 TEST CIRCUITS (Continued) GND2 Test Circuit 8 OUT + OUT – GND1 IN DUT IIN (µA) 5V VOUT (V) + – Typical Differential Output Voltage vs Current Input 2.00 1.60 1.20 0.80 0.40 0.00 –0.40 –0.80 –1.20 –1.60 –2.00 –200 –160 –120 –80 –40 0 40 80 120 160 200 CURRENT INPUT ( µA) NE5212A TEST CONDITIONS Procedure 1 RT measured at 30µA RT = (VO1 – VO2)/(+30µA – (–30µA)) Where: VO1 Measured at IIN = +30µA VO2 Measured at IIN = –30µA Procedure 2 Linearity = 1 – ABS((VOA – VOB) / (VO3 – VO4)) Where: VO3 Measured at IIN = +60µA VO4 Measured at IIN = –60µA V OA + R T @ ( ) 60mA) ) V OB V OB + R T @ ( * 60mA) ) V OB Procedure 3 VOMAX = VO7 – VO8 Where: VO7 Measured at IIN = +130µA VO8 Measured at IIN = –130µA Procedure 4 IIN Test Pass Conditions: VO7 – VO5 > 20mV and V06 – VO5 > 20mV Where: VO5 Measured at IIN = +800µA VO6 Measured at IIN = –80µA VO7 Measured at IIN = +130µA VO8 Measured at IIN = –130µA SD00340 Figure 6. Test Circuit 8 |
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