2003 Feb 24

5

Philips Semiconductors

Product specification

UHF power LDMOS transistor

BLF2022-70

handbook, halfpage

Gp

(dB)

Gp

η

D

(%)

η

D

15

10

5

0

30

10

0

20

MGW534

30

34

32

36

38

40

PL(AV) (dBm)

Fig.6

Power gain and drain efficiency as functions

of average load power; typical values.

Two-carrier W-CDMA performance.

Input signal: 3GPP W-CDMA 1-64DPCH with 66 % clipping;

peak to average power ratio: 8.5 dB at 0.01 % and 9.2 dB at

0.0001 % (CCDF) per carrier;

channel spacing/bandwidth = 5 MHz / 3.84 MHz.

Measured in a W-CDMA application circuit.

handbook, halfpage

dim

(dBc)

ACLR

(dBc)

30

34

32

36

38

40

0

−20

−60

−40

0

−20

−60

−40

MGW535

ACLR

dim

PL(AV) (dBm)

Fig.7

Intermodulation distortion and adjacent

channel power ratio as functions of average

load power; typical values.

Two-carrier W-CDMA performance.

Input signal: 3GPP W-CDMA 1-64DPCH with 66 % clipping;

peak to average power ratio: 8.5 dB at 0.01 % and 9.2 dB at

0.0001 % (CCDF) per carrier;

channel spacing/bandwidth = 5 MHz / 3.84 MHz.

Measured in a W-CDMA application circuit.