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IRGSL6B60KD Datasheet(PDF) 2 Page - International Rectifier |
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IRGSL6B60KD Datasheet(HTML) 2 Page - International Rectifier |
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2 / 15 page  IRGB6B60KDPbF/IRGS/SL6B60KD 2 www.irf.com Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Ref.Fig. 5, 6,7 9,10,11 9,10,11 12 Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 500µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.3 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C) VCE(on) Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 V IC = 5.0A, VGE = 15V ––– 2.20 2.50 IC = 5.0A,VGE = 15V, TJ = 150°C VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C) gfe Forward Transconductance ––– 3.0 ––– S VCE = 50V, IC = 5.0A, PW=80µs ICES Zero Gate Voltage Collector Current ––– 1.0 150 µA VGE = 0V, VCE = 600V ––– 200 500 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop ––– 1.25 1.45 IC = 5.0A ––– 1.20 1.40 V IC = 5.0A TJ = 150°C IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V 8 Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) ––– 18.2 ––– IC = 5.0A Qge Gate - Emitter Charge (turn-on) ––– 1.9 ––– nC VCC = 400V Qgc Gate - Collector Charge (turn-on) ––– 9.2 ––– VGE = 15V Eon Turn-On Switching Loss ––– 110 210 µJ IC = 5.0A, VCC = 400V Eoff Turn-Off Switching Loss ––– 135 245 VGE = 15V,RG = 100Ω, L =1.4mH Etot Total Switching Loss ––– 245 455 Ls = 150nH TJ = 25°C td(on) Turn-On Delay Time ––– 25 34 IC = 5.0A, VCC = 400V tr Rise Time ––– 17 26 VGE = 15V, RG = 100Ω L =1.4mH td(off) Turn-Off Delay Time ––– 215 230 ns Ls = 150nH, TJ = 25°C tf Fall Time ––– 13.2 22 Eon Turn-On Switching Loss ––– 150 260 IC = 5.0A, VCC = 400V Eoff Turn-Off Switching Loss ––– 190 300 µJ VGE = 15V,RG = 100Ω, L =1.4mH Etot Total Switching Loss ––– 340 560 Ls = 150nH TJ = 150°C td(on) Turn-On Delay Time ––– 28 37 IC = 5.0A, VCC = 400V tr Rise Time ––– 17 26 VGE = 15V, RG = 100Ω L =1.4mH td(off) Turn-Off Delay Time ––– 240 255 ns Ls = 150nH, TJ = 150°C tf Fall Time ––– 18 27 Cies Input Capacitance ––– 290 ––– VGE = 0V Coes Output Capacitance ––– 34 ––– pF VCC = 30V Cres Reverse Transfer Capacitance ––– 10 ––– f = 1.0MHz TJ = 150°C, IC = 26A, Vp =600V VCC = 500V, VGE = +15V to 0V, µs TJ = 150°C, Vp =600V, RG = 100Ω VCC = 360V, VGE = +15V to 0V Erec Reverse Recovery energy of the diode ––– 90 175 µJ TJ = 150°C trr Diode Reverse Recovery time ––– 70 80 ns VCC = 400V, IF = 5.0A, L = 1.4mH Irr Diode Peak Reverse Recovery Current ––– 10 14 A VGE = 15V,RG = 100Ω, Ls = 150nH Switching Characteristics @ TJ = 25°C (unless otherwise specified) RBSOA Reverse Bias Safe Operting Area FULL SQUARE SCSOA Short Circuit Safe Operting Area 10 ––– ––– Ref.Fig. CT1 CT4 CT4 13,15 WF1WF2 4 CT2 CT3 WF4 17,18,19 20, 21 CT4,WF3 CT4 RG = 100Ω 14, 16 CT4 WF1 WF2 Note: to are on page 15 |
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