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BF1210 Datasheet(PDF) 9 Page - NXP Semiconductors |
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BF1210 Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 21 page BF1210_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 25 October 2006 9 of 21 NXP Semiconductors BF1210 Dual N-channel dual gate MOSFET VDS(A) =5V; VGG =5V; ID(nom)(A) =19mA; RG1(A) =59kΩ; f = 50 MHz; Tamb =25 °C; see Figure 32. VDS(A) =5V; VGG =5V; VG2-S(nom) =4V; RG1(A) =59kΩ; fw = 50 MHz; funw = 60 MHz; ID(nom)(A) = 19 mA; Tamb =25 °C; see Figure 32. Fig 10. Amplifier A: typical gain reduction as a function of the AGC voltage; typical values Fig 11. Amplifier A: unwanted voltage for 1 % cross modulation as a function of gain reduction; typical values VDS(A) =5V; VGG =5V; VG2-S(nom) =4V; RG1(A) =59kΩ; f = 50 MHz; ID(nom)(A) = 19 mA; Tamb =25 °C; see Figure 32. Fig 12. Amplifier A: typical drain current as a function of gain reduction; typical values 001aaf484 VAGC (V) 04 3 12 30 20 40 10 0 gain reduction (dB) 50 001aaf485 gain reduction (dB) 050 40 20 30 10 90 100 110 Vunw (dB µV) 80 001aaf486 gain reduction (dB) 050 40 20 30 10 10 20 30 ID (mA) 0 |
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