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| LB123T |
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 DCCOM
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LB123T DISCRETE SEMICONDUCTORS R DC COMPONENTS CO., LTD. TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Pinning 1 = Emitter 2 = Collector 3 = Base TO-126 Dimensions in inches and (millimeters) .055(1.39) .045(1.14) .032(0.81) .028(0.71) .052(1.32) .048(1.22) .620(15.75) .600(15.25) .279(7.09) .275(6.99) .041(1.05) .037(0.95) .022 (0.55) .154(3.91) .150(3.81) Typ 3oTyp 3oTyp .105(2.66) .095(2.41) .189(4.80) .171(4.34) .304(7.72) .285(7.52) 3oTyp 3oTyp .152(3.86) .138(3.50) 1 2 3 Description Designed for high voltage, high speed switching circuits, and amplifier applications. Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 8 V Collector Current(DC) IC 1 A Collector Current(Pluse) IC 2 A Total Power Dissipation PD 3.5 W Total Power Dissipation(TC=25oC) PD 30 W Junction Temperature TJ +150 o C Storage Temperature TSTG -55 to +150 o C Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 600 - - V IC=1mA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 400 - - V IC=10mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 8 - - V IE=1mA, IC=0 Collector Cutoff Current ICBO - - 10 µA VCB=600V, IE=0 Emitter Cutoff Current IEBO - - 10 µA VBE=9V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat)1 - - 0.8 V IC=0.1A, IB=10mA VCE(sat)2 - - 0.9 V IC=0.3A, IB=30mA Base-Emitter Saturation Voltage(1) VBE(sat)1 - - 1.2 V IC=0.1A, IB=10mA VBE(sat)2 - - 1.8 V IC=0.3A, IB=30mA hFE1 10 - 50 - IC=0.3A, VCE=5V DC Current Gain(1) hFE2 10 - - - IC=0.5A, VCE=5V hFE3 6 - - - IC=1A, VCE=5V Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380 µs, Duty Cycle 2% Rank B1 B2 B3 B4 B5 B6 B7 B8 Range 10~17 13~22 18~27 23~32 28~37 33~42 38~47 43~50 Classification of hFE1 |
