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PZM10NB2A Datasheet(PDF) 3 Page - NXP Semiconductors |
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PZM10NB2A Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 12 page 1999 Jun 11 3 Philips Semiconductors Product specification Voltage regulator double diodes PZM-NA series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on an FR4 printed circuit board with Cu clad 5 × 5 mm. THERMAL CHARACTERISTICS Notes 1. Solderpoint of cathode tab. 2. Device mounted on an FR4 printed circuit board with Cu clad 5 × 5 mm. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode IF continuous forward current − 200 mA IZSM non-repetitive peak current tp = 100 µs; square wave see Table 1 P power dissipation; see note 1 Tamb =25 °C − 220 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point one diode loaded; note 1 350 K/W Rth j-a thermal resistance from junction to ambient one diode loaded; note 2 560 K/W |
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