PXTA92 datasheet(3/8 Pages) PHILIPS

Part #	PXTA92

Description	PNP high-voltage transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 8 page

1999 Apr 29

3

Philips Semiconductors

Product speciﬁcation

PNP high-voltage transistor

PXTA92

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.

For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

96

K/W

Rth j-s

thermal resistance from junction to soldering point

16

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −200 V

−−250

nA

IEBO

emitter cut-off current

IC = 0; VBE = −3V

−−100

nA

hFE

DC current gain

VCE = −10 V; note 1

IC = −1mA

25

−

IC = −10 mA

40

−

IC = −30 mA

25

−

VCEsat

collector-emitter saturation voltage

IC = −20 mA; IB = −2mA

−−500

mV

VBEsat

base-emitter saturation voltage

IC = −20 mA; IB = −2mA

−900

mV

Cc

collector capacitance

IE =ie = 0; VCB = −20 V;

f = 1 MHz

−

6pF

fT

transition frequency

IC = −10 mA; VCE = −20 V;

f = 100 MHz

50

−

MHz

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