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PXTA92 Datasheet(PDF) 3 Page - NXP Semiconductors |
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PXTA92 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 29 3 Philips Semiconductors Product specification PNP high-voltage transistor PXTA92 THERMAL CHARACTERISTICS Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 96 K/W Rth j-s thermal resistance from junction to soldering point 16 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −200 V −−250 nA IEBO emitter cut-off current IC = 0; VBE = −3V −−100 nA hFE DC current gain VCE = −10 V; note 1 IC = −1mA 25 − IC = −10 mA 40 − IC = −30 mA 25 − VCEsat collector-emitter saturation voltage IC = −20 mA; IB = −2mA −−500 mV VBEsat base-emitter saturation voltage IC = −20 mA; IB = −2mA −900 mV Cc collector capacitance IE =ie = 0; VCB = −20 V; f = 1 MHz − 6pF fT transition frequency IC = −10 mA; VCE = −20 V; f = 100 MHz 50 − MHz |
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