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PXTA64 Datasheet(PDF) 4 Page - NXP Semiconductors |
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PXTA64 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 8 page  1997 Apr 24 4 Philips Semiconductors Product specification PNP Darlington transistor PXTA64 CHARACTERISTICS Tamb =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −30 V −−100 nA ICES collector cut-off current VBE = 0; VCE = −30 V −−100 nA IEBO emitter cut-off current IC = 0; VBE = −10 V −−100 nA hFE DC current gain IC = −10 mA; VCE = −5 V; see Fig.2 10000 − IC = −100 mA; VCE = −5 V; see Fig.2 20000 − VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −0.1 mA −−1.5 V VBEsat base-emitter saturation voltage IC = −100 mA; IB = −0.1 mA −−1.5 V VBEon base-emitter on-state voltage IC = −100 mA; VCE = −5V −−2V fT transition frequency IC = −100 mA; VCE = −5 V; f = 100 MHz 125 − MHz Fig.2 DC current gain; typical values. handbook, full pagewidth 0 100000 20000 40000 60000 80000 hFE MGD836 −1 −10 IC (mA) −102 −103 VCE = −2V. |
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Similar Description - PXTA64 |
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