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MCZ33797EKR2 Datasheet(PDF) 8 Page - Freescale Semiconductor, Inc |
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MCZ33797EKR2 Datasheet(HTML) 8 Page - Freescale Semiconductor, Inc |
8 / 34 page Analog Integrated Circuit Device Data 8 Freescale Semiconductor 33797 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS VFIRE1A / VFIRE2A Current During High Side Safing Sensor Diagnostics (Command $CO) Per VFIREXA pin, with High Side Safing Sensor Diagnostic active IRRE 260 350 400 µA VFIRE1B / VFIRE2B Current During High Side Safing Sensor Diagnostics (Command $CO) Per VFIREXB pin, with High Side Safing Sensor Diagnostic active IRRE 22 32 55 µA VFIRE1B / VFIRE2B Current During VFIRE Diagnostics (Command $C5) Either VFIRE!B or VFIRE2B Diagnostic active IRRE 0.3 2.0 3.8 mA VFIRE Quiescent Current - Total All VFIRE pins measured together, with Diagnostics Off IQVFIRETOTAL 90 135 180 µA Maximum Allowable External Capacitance to Ground (9) Per Squib pin SQB_LO and SQB_HI CSMAX – – 0.12 µF Maximum Allowable External Resistance to Ground During Firing (9) VFIRE_RTN pin to Ground RSMAX – – 0.15 Ω Individual FET Driver Thermal Shutdown (9), (10) TSD 160 – 190 C FET Driver Thermal Shutdown Re-Enable Threshold After Drive Cool-down (9), (10) TREN 90 – 110 C FET DRIVERS HIGH- AND LOW-SIDE DRIVER TRANSISTOR STATUS/DIAGNOSTICS ($82, $83 COMMANDS) Voltage Transistor Test Threshold for High-Side Driver Transistor VTRANTST1 5.5 6.0 6.5 V High-Side Driver Current Limit During High-Side Driver Transistor Diagnostics 15 V ≤ V VFIRE_XX ≤ 35 V ITRANTST1 2.0 10 50 mA Voltage Transistor Test Threshold for Low-Side Driver Transistor VTRANTST2 1.0 1.4 2.0 V Low-Side Driver Current Limit During Low-Side Driver Transistor Diagnostics 15 V ≤ V VFIRE_XX ≤ 35 V ITRANTST2 2.0 10 50 mA FEN INPUT PIN (FEN_1 AND FEN_2) Internal Current Pull-Down IFEN -25 -40 -50 µA Logic Low Level VFEN(LO) 0.0 2.5 0.35 x VDD V Fire Enable Pin Logic High Level VFEN(HI) 0.65 x VDD 2.5 1.0 x VDD V Notes 9 Guaranteed by design. 10 With a nominal squib load, the FET squib driver will not enter thermal shutdown until the driver has been active for a minimum of 2.1 ms. The individual squib driver thermal shutdown will not affect other squib driver firing ON times. With a shorted squib load, the FET squib driver will not enter thermal shutdown until the driver has been active for a minimum of 2.1 ms. When the thermal shutdown limit is exceeded, the FET driver will turn OFF and the thermal status bit will be set to 1. The FET squib driver can be activated through the arm/fire command when the TEMPRENABLE (MIN) is reached (thermal shutdown status “0”). Nominal squib load: 2.15 Ω ±0.15 Ω. Shorted squib load: 0.1 Ω. Table 3. Static Electrical Characteristics (continued) Characteristics noted under conditions 4.75 V ≤ VDD ≤ 5.25 V; 7.0 V ≤ VVFIRE_XX ≤ 35 V; VVDIAG_X = VVFIRE_XX; FEN 1 = FEN 2 = VDD; RR_LIMIT_X = 10 kΩ ±1%, RR_DIAG = 10 kΩ ±1%, -40°C ≤ TA ≤ +85°C, GND = 0 unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit |
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