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PSMN070-200P Datasheet(PDF) 3 Page - NXP Semiconductors |
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PSMN070-200P Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 12 page August 1999 3 Rev 1.000 Philips Semiconductors Product specification PSMN070-200B; PSMN070-200P N-channel TrenchMOS(TM) transistor AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT E AS Non-repetitive avalanche Unclamped inductive load, I AS = 35 A; - 462 mJ energy t p = 100 µs; Tj prior to avalanche = 25˚C; V DD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer to fig:15 I AS Non-repetitive avalanche - 35 A current THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-mb Thermal resistance junction - 0.6 K/W to mounting base R th j-a Thermal resistance junction SOT78 package, in free air 60 - K/W to ambient SOT404 package, pcb mounted, minimum 50 - K/W footprint ELECTRICAL CHARACTERISTICS T j= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA; 200 - - V voltage T j = -55˚C 178 - - V V GS(TO) Gate threshold voltage V DS = VGS; ID = 1 mA 2.0 3.0 4.0 V T j = 175˚C 1.0 - - V T j = -55˚C - - 6 V R DS(ON) Drain-source on-state V GS = 10 V; ID = 17 A - 60 70 m Ω resistance T j = 175˚C - - 203 m Ω I GSS Gate source leakage current V GS = ±10 V; VDS = 0 V - 2 100 nA I DSS Zero gate voltage drain V DS = 200 V; VGS = 0 V; - 0.05 10 µA current T j = 175˚C - - 500 µA Q g(tot) Total gate charge I D = 35 A; VDD = 160 V; VGS = 10 V - 77 - nC Q gs Gate-source charge - 16 - nC Q gd Gate-drain (Miller) charge - 28 - nC t d on Turn-on delay time V DD = 100 V; RD = 2.7 Ω; - 22 - ns t r Turn-on rise time V GS = 10 V; RG = 5.6 Ω - 100 - ns t d off Turn-off delay time Resistive load - 80 - ns t f Turn-off fall time - 90 - ns L d Internal drain inductance Measured from tab to centre of die - 3.5 - nH L d Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH (SOT78 package only) L s Internal source inductance Measured from source lead to source - 7.5 - nH bond pad C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 4570 - pF C oss Output capacitance - 370 - pF C rss Feedback capacitance - 160 - pF |
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