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PSMN063-150D Datasheet(PDF) 8 Page - NXP Semiconductors |
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PSMN063-150D Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 12 page Philips Semiconductors PSMN063-150D N-channel enhancement mode field-effect transistor Product data Rev. 03 — 31 October 2001 8 of 12 9397 750 08594 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. Tj =25 °C and 175 °C; VGS =0V ID = 30 A; VDD = 30 V and 120 V Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. IS (A) VSD (V) 0.4 0 0.8 1.2 Tj = 175 oC Tj = 25 oC 0 10 20 30 003aaa156 0 4 8 12 VGS (V) 0 20 40 60 QG (nC) VDD = 30 V VDD = 120 V 003aaa155 |
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