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PSMN040-200W Datasheet(PDF) 2 Page - NXP Semiconductors |
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PSMN040-200W Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product specification N-channel TrenchMOS ™ transistor PSMN040-200W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-mb Thermal resistance junction - 0.5 K/W to mounting base R th j-a Thermal resistance junction in free air 45 - K/W to ambient ELECTRICAL CHARACTERISTICS T j= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA; 200 - - V voltage T j = -55˚C 178 - - V V GS(TO) Gate threshold voltage V DS = VGS; ID = 1 mA 2.0 3.0 4.0 V T j = 175˚C 1.0 - - V T j = -55˚C - - 6 V R DS(ON) Drain-source on-state V GS = 10 V; ID = 25 A - 35 40 m Ω resistance T j = 175˚C - - 116 m Ω I GSS Gate source leakage current V GS = ±10 V; VDS = 0 V - 2 100 nA I DSS Zero gate voltage drain V DS = 200 V; VGS = 0 V; - 0.05 10 µA current T j = 175˚C - - 500 µA Q g(tot) Total gate charge I D = 50 A; VDD = 160 V; VGS = 10 V - 183 - nC Q gs Gate-source charge - 40 - nC Q gd Gate-drain (Miller) charge - 73 - nC t d on Turn-on delay time V DD = 100 V; RD = 3.9 Ω; - 43 - ns t r Turn-on rise time V GS = 10 V; RG = 5.6 Ω -94 - ns t d off Turn-off delay time Resistive load - 230 - ns t f Turn-off fall time - 92 - ns L d Internal drain inductance Measured from tab to centre of die - 3.5 - nH L d Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH L s Internal source inductance Measured from source lead to source - 7.5 - nH bond pad C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 9530 - pF C oss Output capacitance - 732 - pF C rss Feedback capacitance - 380 - pF REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T j = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I S Continuous source current - - 50 A (body diode) I SM Pulsed source current (body - - 200 A diode) V SD Diode forward voltage I F = 25 A; VGS = 0 V - 0.85 1.2 V t rr Reverse recovery time I F = 20 A; -dIF/dt = 100 A/µs; - 160 - ns Q rr Reverse recovery charge V GS = 0 V; VR = 30 V - 1.4 - µC August 1999 2 Rev 1.000 |
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