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UPC8178TB-E3-A Datasheet(PDF) 1 Page - California Eastern Labs |
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UPC8178TB-E3-A Datasheet(HTML) 1 Page - California Eastern Labs |
1 / 7 page SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS UPC8178TB DESCRIPTION The UPC8178TB is a silicon monolithic integrated circuit designed as an amplifier for mobile communications. This IC can realize low current consumption with an external chip inductor which cannot be realized on an internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0 V. This device is manufactured using NEC's 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process which uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC has excellent perfor- mance, uniformity and reliability. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. California Eastern Laboratories APPLICATIONS • Buffer Amplifiers on 0.1 to 2.4 GHz mobile communications system PART NUMBER UPC8178TB PACKAGE OUTLINE S06 SYMBOLS PARAMETERS AND CONDITIONS1 UNITS MIN TYP MAX ICC Circuit Current (no signal) mA 1.4 1.9 2.4 GP f = 1.0 GHz dB 9.0 11.0 13.0 Power Gain f = 1.9 GHz dB 9.0 11.5 13.5 f = 2.4 GHz dB 9.0 11.5 13.5 ISOL f = 1.0 GHz dB 34 39 – Isolation f = 1.9 GHz dB 35 40 – f = 2.4 GHz dB 33 38 – PO(1dB) f = 1.0 GHz dBm -8.0 -4.0 – 1 dB Gain Compression Output Power f = 1.9 GHz dBm -11.0 -7.0 – f = 2.4 GHz dBm -11.5 -7.5 – NF f = 1.0 GHz dB – 5.5 7.0 Noise Figure f = 1.9 GHz dB – 5.5 7.0 f = 2.4 GHz dB – 5.5 7.0 RLin f = 1.0 GHz dB 4 7 – Input Return Loss f = 1.9 GHz dB 5 8 – f = 2.4 GHz dB 6.5 9.5 – ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = VOUT = 3.0 V, ZS = ZL = 50 Ω, at LC matched frequency unless otherwise specified)) • LOW CURRENT CONSUMPTION ICC = 1.9 mA TYP @ VCC = 3.0 V • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V • EXCELLENT ISOLATION: ISOL = 39 dB TYP @ f = 1.0 GHz ISOL = 40 dB TYP @ f = 1.9 GHz ISOL = 38 dB TYP @ f = 2.4 GHz • POWER GAIN: GP = 11.0 dB TYP @ f = 1.0 GHz GP = 11.5 dB TYP @ f = 1.9 GHz GP = 11.5 dB TYP @ f = 2.4 GHz • OPERATING FREQUENCY: 0.1 to 2.4 GHz (Output port LC matching) • 1 dB GAIN COMPRESSION OUTPUT POWER: PO(1 dB) = -4.0 dBm TYP @ f = 1.0 GHz PO(1 dB) = -7.0 dBm TYP @ f = 1.9 GHz PO(1 dB) = -7.5 dBm TYP @ f = 2.4 GHz • HIGH-DENSITY SURFACE MOUNTING: 6-pin super minimold package (2.0 x 1.25 x 0.9 mm) • LOW WEIGHT: 7 mg (Standard Value) FEATURES +20 +10 0 -10 -20 -30 -40 0.1 1.0 0.3 3.0 TA = -40°C TA = +85°C TA = +25°C VCC = 3.0 V 1.9 GHz 2.4 GHz 1.0 GHz POWER GAIN vs. FREQUENCY |
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