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PN3440 Datasheet(PDF) 2 Page - NXP Semiconductors |
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PN3440 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1997 Sep 04 2 Philips Semiconductors Product specification NPN high-voltage transistors PN3439; PN3440 FEATURES • Low current (max. 100 mA) • High voltage (max. 350 V). APPLICATIONS • Telephony and professional communication equipment. DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. PINNING PIN DESCRIPTION 1 collector 2 base 3 emitter Fig.1 Simplified outline (TO-92; SOT54) and symbol. handbook, halfpage1 3 2 MAM279 1 2 3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter PN3439 − 400 V PN3440 − 300 V VCEO collector-emitter voltage open base PN3439 − 350 V PN3440 − 250 V ICM peak collector current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C − 500 mW hFE DC current gain IC = 2 mA; VCE =10V PN3439 30 − hFE DC current gain IC = 20 mA; VCE =10V PN3440 40 − fT transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz 70 − MHz |
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