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PMST5551 Datasheet(PDF) 2 Page - NXP Semiconductors |
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PMST5551 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 Apr 29 2 Philips Semiconductors Product specification NPN high-voltage transistors PMST5550; PMST5551 FEATURES • Low current (max. 300 mA) • High voltage (max. 160 V). APPLICATIONS • Switching and amplification in high voltage applications such as telephony. DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package. PNP complement: PMST5401. MARKING Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. TYPE NUMBER MARKING CODE(1) PMST5550 ∗1F PMST5551 ∗G3 PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 Simplified outline (SOT323) and symbol. handbook, halfpage 2 3 1 MAM062 3 2 1 Top view LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter PMST5550 − 160 V PMST5551 − 180 V VCEO collector-emitter voltage open base PMST5550 − 140 V PMST5551 − 160 V VEBO emitter-base voltage open collector − 6V IC collector current (DC) − 300 mA ICM peak collector current − 600 mA IBM peak base current − 100 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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